文献
J-GLOBAL ID:201702253218198275
整理番号:17A0362522
AlGaN/GaN高電子移動度トランジスタ(HEMT)オン状態分解における2次元電子ガス(2DEG)の役割【Powered by NICT】
Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation
著者 (12件):
Syaranamual G.J.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Syaranamual G.J.
(School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore)
,
Sasangka W.A.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Made R.I.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Arulkumaran S.
(Temasek Laboratories@NTU, Nanyang Technological University, 637553, Singapore)
,
Ng G.I.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Ng G.I.
(School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore)
,
Foo S.C.
(Temasek Laboratories@NTU, Nanyang Technological University, 637553, Singapore)
,
Gan C.L.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Gan C.L.
(School of Material Science and Engineering, Nanyang Technological University, 639798, Singapore)
,
Thompson C.V.
(Low Energy Electronic Systems, Singapore-MIT Alliance for Research and Technology, 138602, Singapore)
,
Thompson C.V.
(Department of Material Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
64
ページ:
589-593
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)