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J-GLOBAL ID:201702253411973623
整理番号:17A0412390
卵殻を用いて作製した大きな不揮発性バイポーラ抵抗スイッチングメモリ挙動【Powered by NICT】
A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
著者 (9件):
Zhou Guangdong
(Guizhou Institute of Technology, Guizhou 550003, PR China)
,
Zhou Guangdong
(Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, PR China)
,
Zhou Guangdong
(Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China)
,
Sun Bai
(School of Physical Science and Technology, Southwest Jiaotong University, Sichuan 610031, PR China)
,
Sun Bai
(Institute for Clean Energy & Advanced Materials (ICEAM), Southwest University, Chongqing 400715, PR China)
,
Sun Bai
(Chongqing Key Laboratory for Advanced Materials and Technologies of Clean Energy, Chongqing 400715, PR China)
,
Zhou Ankun
(KunMing Institute of Botany, Chinese Academy of Science, Kunming 650201, PR China)
,
Wu Bo
(Institute of Theoretical Physics, Zunyi Normal College, Zunyi 563002, PR China)
,
Huang Haishen
(Institute of Theoretical Physics, Zunyi Normal College, Zunyi 563002, PR China)
資料名:
Current Applied Physics
(Current Applied Physics)
巻:
17
号:
2
ページ:
235-239
発行年:
2017年
JST資料番号:
W1579A
ISSN:
1567-1739
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)