文献
J-GLOBAL ID:201702253604265274
整理番号:17A0214198
(TSV)技術によるによるシリコンにより可能になった垂直チャネルデバイス【Powered by NICT】
Vertical channel devices enabled by through silicon via (TSV) technologies
著者 (15件):
Kothandaraman C.
(IBM T.J. Watson Research Center, Yorktown Heights, NY, USA)
,
Rosenblatt S.
(IBM T.J. Watson Research Center, Yorktown Heights, NY, USA)
,
Safran J.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Oldiges P.
(IBM T.J. Watson Research Center, Yorktown Heights, NY, USA)
,
Kulkarni-Kerber P.
(IBM T.J. Watson Research Center, Yorktown Heights, NY, USA)
,
Xumalo J.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Landers W.
(IBM T.J. Watson Research Center, Yorktown Heights, NY, USA)
,
Liu J.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Oakley J. A.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Butt S.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Graves-Abe T. L.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Robson N.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Farooq M. G.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Berger D.
(GLOBALFOUNDRIES Inc, Hopewell Junction, NY, USA)
,
Iyer S. S.
(Dept. Electrical and Computer Engineering, UCLA, CA, USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
9.6.1-9.6.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)