文献
J-GLOBAL ID:201702253969955124
整理番号:17A0399724
結晶学的KOHエッチングと被覆成長を用いた新しいGaN系垂直ヘテロ構造電界効果トランジスタ構造【Powered by NICT】
Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth
著者 (11件):
Qian H.
(Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK)
,
Lee K.B.
(Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK)
,
Vajargah S. Hosseini
(Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK)
,
Novikov S.V.
(School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK)
,
Guiney I.
(Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK)
,
Zaidi Z.H.
(Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK)
,
Jiang S.
(Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK)
,
Wallis D.J.
(Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK)
,
Foxon C.T.
(School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK)
,
Humphreys C.J.
(Department of Material Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, UK)
,
Houston P.A.
(Department of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, UK)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
459
ページ:
185-188
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)