文献
J-GLOBAL ID:201702254266218901
整理番号:17A0181083
電子ビーム誘起電流と時間分解光ルミネセンスによるIn(Ga)As/InAsSbタイプII超格子の拡散特性【Powered by NICT】
Diffusion characterization of In(Ga)As/InAsSb type-II superlattices via electron beam induced current and time-resolved photoluminescence
著者 (6件):
Yoon N.
(Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana IL 61801, USA)
,
Reyner C. J.
(Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA)
,
Ariyawansa G.
(Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA)
,
Scheihing J. E.
(Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA)
,
Mabon J.
(Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801)
,
Wasserman D.
(Department of Electrical and Computer Engineering, University of Illinois Urbana Champaign, Urbana IL 61801, USA)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IPC
ページ:
470-471
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)