文献
J-GLOBAL ID:201702254700703787
整理番号:17A0276647
GNR MOSFETのゲート誘電体に依存する性能:タイトバインディング研究【Powered by NICT】
Gate dielectric dependent performance of GNR MOSFET: A tight binding study
著者 (5件):
Sarker Md. Shamim
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh)
,
Sabbik Al-Mohtashim
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh)
,
Islam Muhammad Mainul
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh)
,
Alam Md. Nur Kutubul
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh)
,
Islam Md. Rafiqul
(Department of Electrical and Electronic Engineering, Khulna University of Engineering & Technology, 9203, Bangladesh)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
ICECE
ページ:
403-406
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)