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J-GLOBAL ID:201702255210099046
整理番号:17A0697157
点欠陥の研究と移動ヒータ法により成長させたInドープCdMnTeの電気的性質【Powered by NICT】
Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method
著者 (8件):
Wen Xuliang
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Zhang Jijun
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Mao Yifei
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Min Jiahua
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Liang Xiaoyan
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Huang Jian
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Tang Ke
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
,
Wang Linjun
(School of Materials Science and Engineering Shanghai University, Shanghai 200444, China)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
463
ページ:
79-85
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)