文献
J-GLOBAL ID:201702255506563242
整理番号:17A0855342
錯形成溶解機構による窒化ガリウム表面の光電気化学的エッチング【Powered by NICT】
Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism
著者 (9件):
Zhang Miao-Rong
(Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China)
,
Zhang Miao-Rong
(University of Chinese Academy of Sciences, 100049 Beijing, PR China)
,
Hou Fei
(Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China)
,
Hou Fei
(Changchun University of Science and Technology, 130022 Changchun, PR China)
,
Wang Zu-Gang
(Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China)
,
Wang Zu-Gang
(Changchun University of Science and Technology, 130022 Changchun, PR China)
,
Zhang Shao-Hui
(Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China)
,
Zhang Shao-Hui
(Changchun University of Science and Technology, 130022 Changchun, PR China)
,
Pan Ge-Bo
(Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou, PR China)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
410
ページ:
332-335
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)