文献
J-GLOBAL ID:201702255672023717
整理番号:17A0280005
集積歪Si0.73Ge0.27チャネルと高k/金属ゲートを持つ高移動度P型MOSFET【Powered by NICT】
High-Mobility P-Type MOSFETs with Integrated Strained-Si0.73Ge0.27 Channels and High-κ/Metal Gates
著者 (6件):
Mao Shujuan
(Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences)
,
Zhu Zhengyong
(Institute of Microelectronics,Chinese Academy of Sciences)
,
Wang Guilei
(Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences)
,
Zhu Huilong
(Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences)
,
Li Junfeng
(Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences)
,
Zhao Chao
(Integrated Circuit Advanced Process Center,Institute of Microelectronics,Chinese Academy of Sciences)
資料名:
Chinese Physics Letters
(Chinese Physics Letters)
巻:
33
号:
11
ページ:
118502-1-118502-4
発行年:
2016年
JST資料番号:
W1191A
ISSN:
0256-307X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
中国 (CHN)
言語:
英語 (EN)