文献
J-GLOBAL ID:201702255763600797
整理番号:17A1637485
酸化ハフニウムに基づくRRAMのスイッチング挙動に及ぼすコンプライアンス電流効果【Powered by NICT】
Compliance current effect on switching behavior of hafnium oxide based RRAM
著者 (7件):
Qi Yanfei
(School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China)
,
Zhao Chun
(Department of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou, China)
,
Fang Yuxiao
(Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK)
,
Lu Qifeng
(Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK)
,
Liu Chenguang
(Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, UK)
,
Yang Li
(Department of Chemistry, Xi’an Jiaotong-Liverpool University, Suzhou, China)
,
Zhao Ce Zhou
(School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
IPFA
ページ:
1-4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)