文献
J-GLOBAL ID:201702255990699048
整理番号:17A0381587
3ウエハボンディングを利用したウエハレベル真空パッケージングを用いたAlN広帯域エネルギーハーベスタ【Powered by NICT】
AlN wideband energy harvesters with wafer-level vacuum packaging utilizing three-wafer bonding
著者 (7件):
Wang Nan
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Sun Chengliang
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Siow Li Yan
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Ji Hongmiao
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Chang Peter
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Zhang Qingxin
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
,
Gu Yuandong
(Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MEMS
ページ:
841-844
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)