文献
J-GLOBAL ID:201702256016575700
整理番号:17A0381633
高温のためのその場調製した同期自己補償膜歪ゲージ【Powered by NICT】
An in-situ prepared synchronous self-compensated film strain gage for high temperature
著者 (4件):
Yang Shenyong
(National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Microelectronics and Nanoscience, Shanghai Jiao Tong University, Shanghai, 200240, PR China)
,
Zhang Congchun
(National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Microelectronics and Nanoscience, Shanghai Jiao Tong University, Shanghai, 200240, PR China)
,
Wang Hong
(National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Microelectronics and Nanoscience, Shanghai Jiao Tong University, Shanghai, 200240, PR China)
,
Ding Guifu
(National Key Laboratory of Science and Technology on Micro/Nano Fabrication Department of Microelectronics and Nanoscience, Shanghai Jiao Tong University, Shanghai, 200240, PR China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
MEMS
ページ:
1021-1024
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)