文献
J-GLOBAL ID:201702256085779594
整理番号:17A1388120
短波赤外検出のためのInGaAs/GaAsSbタイプII超格子に基づくフォトダイオード【Powered by NICT】
InGaAs/GaAsSb Type-II superlattice based photodiodes for short wave infrared detection
著者 (8件):
Uliel Y.
(Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel)
,
Uliel Y.
(Applied Physics Department, Hebrew University, Jerusalem, Israel)
,
Cohen-Elias D.
(Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel)
,
Sicron N.
(Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel)
,
Grimberg I.
(SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel)
,
Snapi N.
(SCD-SemiConductor Devices, P.O. Box 2250, Haifa 31021, Israel)
,
Paltiel Y.
(Applied Physics Department, Hebrew University, Jerusalem, Israel)
,
Katz M.
(Solid State Physics Department, Applied Physics Division, Soreq NRC, Yavne 81800, Israel)
資料名:
Infrared Physics & Technology
(Infrared Physics & Technology)
巻:
84
ページ:
63-71
発行年:
2017年
JST資料番号:
H0184A
ISSN:
1350-4495
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)