文献
J-GLOBAL ID:201702256743869035
整理番号:17A0662455
ErドープとYbドープファイバレーザにおける超短パルス発生のための広帯域可飽和吸収体としてのグラフェンBi_2Te_3ヘテロ構造【Powered by NICT】
Graphene-Bi2Te3 Heterostructure as Broadband Saturable Absorber for Ultra-Short Pulse Generation in Er-Doped and Yb-Doped Fiber Lasers
著者 (6件):
Wang Zhiteng
(Department of Physics and Electronic Information, Hengyang Normal University, Hengyang, China)
,
Mu Haoran
(Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic...)
,
Yuan Jian
(Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic...)
,
Zhao Chujun
(Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, College of Physics and Microelectronic Science, Hunan University, Changsha, China)
,
Bao Qiaoliang
(Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic...)
,
Zhang Han
(Shenzhen University-National University of Singapore Collaborative Innovation Center for Optoelectronic Science and Technology, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic...)
資料名:
IEEE Journal of Selected Topics in Quantum Electronics
(IEEE Journal of Selected Topics in Quantum Electronics)
巻:
23
号:
1
ページ:
ROMBUNNO.8800105.1-5
発行年:
2017年
JST資料番号:
W0734A
ISSN:
1077-260X
CODEN:
IJSQEN
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)