文献
J-GLOBAL ID:201702256967308235
整理番号:17A0661463
電荷捕獲と活性チャネル層のためのブラックリン2Dナノシートに基づく不揮発性電荷注入メモリ【Powered by NICT】
Nonvolatile Charge Injection Memory Based on Black Phosphorous 2D Nanosheets for Charge Trapping and Active Channel Layers
著者 (10件):
Lee Young Tack
(Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea)
,
Lee Junyeong
(Institute of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea)
,
Ju Hyunsu
(Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea)
,
Lim Jung Ah
(Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea)
,
Yi Yeonjin
(Institute of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea)
,
Choi Won Kook
(Materials and Life Science Research Division, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea)
,
Choi Won Kook
(Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST), Daejeon, 34113, South Korea)
,
Hwang Do Kyung
(Center for Opto-Electronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul, 02792, South Korea)
,
Hwang Do Kyung
(Department of Nanomaterials and Nano Science, Korea University of Science and Technology (KUST), Daejeon, 34113, South Korea)
,
Im Seongil
(Institute of Physics and Applied Physics, Yonsei University, Seoul, 03722, South Korea)
資料名:
Advanced Functional Materials
(Advanced Functional Materials)
巻:
26
号:
31
ページ:
5701-5707
発行年:
2016年
JST資料番号:
W1336A
ISSN:
1616-301X
CODEN:
AFMDC6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)