文献
J-GLOBAL ID:201702256998289609
整理番号:17A0253766
AlGaN/GaNヘテロ構造電界効果トランジスタの金ベースおよび金フリーOhm接触の形成機構
Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors
著者 (7件):
Shriki A.
(Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Winter R.
(Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Calahorra Y.
(Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Kauffmann Y.
(Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Ankonina G.
(Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Eizenberg M.
(Department of Material Science and Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
,
Ritter D.
(Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
121
号:
6
ページ:
065301-065301-5
発行年:
2017年02月14日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)