文献
J-GLOBAL ID:201702257034498536
整理番号:17A0399668
閉鎖空間昇華法によるCdZnTe基板上のHg_1Cd-x Te蒸着【Powered by NICT】
Hg1- Cd x Te vapor deposition on CdZnTe substrates by Closed Space Sublimation technique
著者 (7件):
Rubio Sandra
(Crystal Growth Laboratory, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049 Madrid, Spain)
,
Sochinskii Nikolai V.
(Crystal Growth Laboratory, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049 Madrid, Spain)
,
Repiso Eva
(Crystal Growth Laboratory, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049 Madrid, Spain)
,
Tsybrii Zinoviia
(Institute of Semiconductor Physics, 03028 Kiev, Ukraine)
,
Sizov Fiodor
(Institute of Semiconductor Physics, 03028 Kiev, Ukraine)
,
Plaza Jose Luis
(Crystal Growth Laboratory, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049 Madrid, Spain)
,
Dieguez Ernesto
(Crystal Growth Laboratory, Department of Materials Physics, Faculty of Science, University Autonoma of Madrid, Ciudad Universitaria de Cantoblanco, 28049 Madrid, Spain)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
457
ページ:
211-214
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)