文献
J-GLOBAL ID:201702257036029897
整理番号:17A0046693
1.2kV 30AシリコンカーバイドMOSFETの特性評価とモデル化
Characterization and Modeling of a 1.2-kV 30-A Silicon-Carbide MOSFET
著者 (8件):
Mukunoki Yasushige
(Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan)
,
Nakamura Yuta
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan)
,
Horiguchi Takeshi
(Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan)
,
Kinouchi Shin-ichi
(Automotive Electronics Development Center, Mitsubishi Electric Corporation, Himeji, Japan)
,
Nakayama Yasushi
(Advanced Technology Research and Development Center, Mitsubishi Electric Corporation, Amagasaki, Japan)
,
Terashima Tomohide
(Power Device Works, Mitsubishi Electric Corporation, Fukuoka, Japan)
,
Kuzumoto Masaki
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan)
,
Akagi Hirofumi
(Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Tokyo, Japan)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
63
号:
11
ページ:
4339-4345
発行年:
2016年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)