文献
J-GLOBAL ID:201702257191184953
整理番号:17A0443377
フリップチップ法でパッケージしたSRAMデバイスのためのアルファ粒子誘起SEU断面積を測定するための代替的アプローチ:高エネルギーアルファ裏面照射【Powered by NICT】
An alternative approach to measure alpha-particle-induced SEU cross-section for flip-chip packaged SRAM devices: High energy alpha backside irradiation
著者 (5件):
Khan Saqib Ali
(RSC Lab, Electronics and Communication Engineering Department, Hanyang University, Republic of Korea)
,
Lim Chulseung
(RSC Lab, Electronics and Communication Engineering Department, Hanyang University, Republic of Korea)
,
Bak Geunyong
(RSC Lab, Electronics and Communication Engineering Department, Hanyang University, Republic of Korea)
,
Baeg Sanghyeon
(RSC Lab, Electronics and Communication Engineering Department, Hanyang University, Republic of Korea)
,
Lee Soonyoung
(Technology Quality & Reliability, Samsung Electronics, Yongin City, Gyeonggi-do, Republic of Korea)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
69
ページ:
100-108
発行年:
2017年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)