文献
J-GLOBAL ID:201702257533492445
整理番号:17A0057902
高直線性ステップ勾配AlGaN/GaNヘテロ接合電界効果トランジスタ【Powered by NICT】
High linearity step-graded AlGaN/GaN heterojunction field effect transistor
著者 (10件):
Fang Y. L.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Song X. B.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Feng Z. H.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Yin J. Y.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Zhang Z. R.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Wang B.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Guo Y. M.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Wang Y. G.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Lv Y. J.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
,
Cai S. J.
(National key laboratory of ASIC, Hebei Semiconductor Research Institute, Hezuo Road, No. 113, Shijiazhuang, China)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
SSLChina: IFWS
ページ:
104-106
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)