文献
J-GLOBAL ID:201702257544986507
整理番号:17A0448953
窒素ドープZnO膜中のテルルの支援によるV_Zn N_O受容体の形成【Powered by NICT】
Formation of VZn-NO acceptors with the assistance of tellurium in nitrogen-doped ZnO films
著者 (6件):
Tang Kun
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Zhu Shunming
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Xu Zhonghua
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Shen Yang
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Ye Jiandong
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
,
Gu Shulin
(School of Electronic Science and Engineering, Nanjing University, 210093, China)
資料名:
Journal of Alloys and Compounds
(Journal of Alloys and Compounds)
巻:
699
ページ:
484-488
発行年:
2017年
JST資料番号:
D0083A
ISSN:
0925-8388
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)