文献
J-GLOBAL ID:201702257584456406
整理番号:17A0009322
GaAs(Bi)合金のドーパント取込みと輸送特性への表面再建の影響
Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys
著者 (7件):
Field R. L.
(Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA)
,
Occena J.
(Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA)
,
Jen T.
(Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA)
,
Del Gaudio D.
(Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109-2136, USA)
,
Yarlagadda B.
(Pioneer High School, Ann Arbor, Michigan 48103, USA)
,
Kurdak C.
(Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA)
,
Goldman R. S.
(Department of Physics, University of Michigan, Ann Arbor, Michigan 48109-1040, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
109
号:
25
ページ:
252105-252105-5
発行年:
2016年12月19日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)