文献
J-GLOBAL ID:201702258018390154
整理番号:17A1729181
メモリスタナノセンサの制御改善のためのギャップ工学【Powered by NICT】
Gap engineering for improved control of memristor nanosensors
著者 (8件):
Ibarlucea Bergoi
(Institute of Materials Science and Max Bergmann Center for Biomaterials, Center for Advancing Electronics Dresden (cfaed), Technische Universitaet Dresden, Dresden, Germany)
,
Baraban Larysa
(Institute of Materials Science and Max Bergmann Center for Biomaterials, Center for Advancing Electronics Dresden (cfaed), Technische Universitaet Dresden, Dresden, Germany)
,
Cuniberti Gianaurelio
(Institute of Materials Science and Max Bergmann Center for Biomaterials, Center for Advancing Electronics Dresden (cfaed), Technische Universitaet Dresden, Dresden, Germany)
,
Kim Kihyun
(Department of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Rim Taiuk
(Department of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Baek Chang-Ki
(Department of Creative IT Engineering, Pohang University of Science and Technology (POSTECH), Pohang, Korea)
,
Ascoli Alon
(Chair of Fundamentals of Electrical Engineering, Institute of Circuits and Systems (IEE), Technische Universitaet Dresden, Dresden, Germany)
,
Tetzlaff Ronald
(Chair of Fundamentals of Electrical Engineering, Institute of Circuits and Systems (IEE), Technische Universitaet Dresden, Dresden, Germany)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
ECCTD
ページ:
1-4
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)