文献
J-GLOBAL ID:201702258684375063
整理番号:17A1345170
温度の効率的検出のための静電的に形成されたナノワイヤトランジスタCMOS適合【Powered by NICT】
CMOS Compatible Electrostatically Formed Nanowire Transistor for Efficient Sensing of Temperature
著者 (7件):
Shimanovich Klimentiy
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
,
Coen Tom
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
,
Vaknin Yonatan
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
,
Henning Alex
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
,
Hayon Joseph
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
,
Roizin Yakov
(Research and Development Department, Tower-Jazz, Migdal HaEmek, Israel)
,
Rosenwaks Yossi
(Department of Physical Electronics, School of Electrical Engineering, Faculty of Engineering, Tel Aviv University, Tel Aviv, Israel)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
9
ページ:
3836-3840
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)