文献
J-GLOBAL ID:201702258766235602
整理番号:17A0414085
NANDフラッシュベースSSDの寿命を延長する動的消去電圧と時間スケーリング【Powered by NICT】
Dynamic Erase Voltage and Time Scaling for Extending Lifetime of NAND Flash-Based SSDs
著者 (5件):
Jeong Jaeyong
(Memory Division, Samsung Electronics, Hwaseong-si, Gyeonggi-do, Korea)
,
Song Youngsun
(Department of Computer Science and Engineering, Seoul National University, Gwanak-gu, Seoul, Korea)
,
Hahn Sangwook Shane
(Department of Computer Science and Engineering, Seoul National University, Gwanak-gu, Seoul, Korea)
,
Lee Sungjin
(Department of Computer Science and Information Engineering, Inha University, Nam-gu, Incheon, Korea)
,
Kim Jihong
(Department of Computer Science and Engineering, Seoul National University, Gwanak-gu, Seoul, Korea)
資料名:
IEEE Transactions on Computers
(IEEE Transactions on Computers)
巻:
66
号:
4
ページ:
616-630
発行年:
2017年
JST資料番号:
C0233A
ISSN:
0018-9340
CODEN:
ICTOB4
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)