文献
J-GLOBAL ID:201702258995023167
整理番号:17A0402794
水素プラズマ処理後のAlGaN/GaNヘテロ構造の安定性【Powered by NICT】
Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment
著者 (7件):
Babchenko O.
(Institute of Electrical Engineering SAV, Dubravska cesta 9, 841 04 Bratislava, Slovakia)
,
Dzuba J.
(Institute of Electrical Engineering SAV, Dubravska cesta 9, 841 04 Bratislava, Slovakia)
,
Lalinsky T.
(Institute of Electrical Engineering SAV, Dubravska cesta 9, 841 04 Bratislava, Slovakia)
,
Vojs M.
(Institute of Electronics and Photonics STU, Ilkovicova 3, 812 19 Bratislava, Slovakia)
,
Vincze A.
(International Laser Centre, Ilkovicova 3, 841 04 Bratislava, Slovakia)
,
Izak T.
(Institute of Physics AS CR, v.v.i., Cukrovarnicka 10, 162 53 Prague, Czech Republic)
,
Vanko G.
(Institute of Electrical Engineering SAV, Dubravska cesta 9, 841 04 Bratislava, Slovakia)
資料名:
Applied Surface Science
(Applied Surface Science)
巻:
395
ページ:
92-97
発行年:
2017年
JST資料番号:
B0707B
ISSN:
0169-4332
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)