文献
J-GLOBAL ID:201702259055233851
整理番号:17A0313230
酸化マンガンおよびタンタル酸化物デバイスの抵抗スイッチング特性【Powered by NICT】
Resistive switching characteristics in manganese oxide and tantalum oxide devices
著者 (6件):
Hu Quanli
(Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
,
Abbas Yawar
(Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
,
Abbas Haider
(Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
,
Park Mi Ra
(Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
,
Yoon Tae-Sik
(Department of Materials Science and Engineering, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
,
Kang Chi Jung
(Department of Physics, Myongji University, Gyeonggi-do 449-728, Republic of Korea)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
160
ページ:
49-53
発行年:
2016年07月01日
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)