文献
J-GLOBAL ID:201702259487980165
整理番号:17A1549019
不動態化電子接触を持つn型Si太陽電池ウエハ厚さと抵抗率変化による効率の限界のための源の同定【Powered by NICT】
n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation
著者 (8件):
Richter Armin
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Benick Jan
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Feldmann Frank
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Feldmann Frank
(Department of Sustainable Systems Engineering, Albert Ludwig University of Freiburg, Georges-Kohler-Allee 103, D-79110 Freiburg, Germany)
,
Fell Andreas
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Hermle Martin
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Glunz Stefan W.
(Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Glunz Stefan W.
(Department of Sustainable Systems Engineering, Albert Ludwig University of Freiburg, Georges-Kohler-Allee 103, D-79110 Freiburg, Germany)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
173
ページ:
96-105
発行年:
2017年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)