文献
J-GLOBAL ID:201702259605741475
整理番号:17A1247815
ナノ球リソグラフィーにより作製したサブ100nm直径のCoFeB/IrMnアンチドットとナノドット配列の交換バイアス研究【Powered by NICT】
Exchange bias study of sub-100 nm-diameter CoFeB/IrMn antidot and nanodot arrays fabricated by nanosphere lithography
著者 (7件):
Li X.
(Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong)
,
Leung C.W.
(Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong)
,
Chiu C.-C.
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan)
,
Lin K.-W.
(Department of Materials Science and Engineering, National Chung Hsing University, Taichung 402, Taiwan)
,
Chan Mansun
(Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Hong Kong)
,
Zhou Y.
(School of Science and Engineering, The Chinese University of Hong Kong, Shenzhen, 518172, China)
,
Pong Philip W.T.
(Department of Electrical and Electronic Engineering, The University of Hong Kong, Hong Kong)
資料名:
Physics Letters. A
(Physics Letters. A)
巻:
381
号:
33
ページ:
2709-2714
発行年:
2017年
JST資料番号:
C0600B
ISSN:
0375-9601
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)