文献
J-GLOBAL ID:201702259665393800
整理番号:17A0826149
InGaN/GaNダイオードの異常な光検出モード下のオンチップ集積化【Powered by NICT】
On-Chip Integration Operating Under the Extraordinary Light Detection Mode of an InGaN/GaN Diode
著者 (6件):
Yang Yongchao
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Gao Xumin
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Yuan Jialei
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Li Yuanhang
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
,
Zhang Zhiyu
(Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun, China)
,
Wang Yongjin
(Gruenberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, China)
資料名:
IEEE Photonics Technology Letters
(IEEE Photonics Technology Letters)
巻:
29
号:
5
ページ:
446-449
発行年:
2017年
JST資料番号:
T0721A
ISSN:
1041-1135
CODEN:
IPTLEL
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)