文献
J-GLOBAL ID:201702260177185608
整理番号:17A0759441
絶縁ゲートGaNパワーデバイスにおける捕獲機構の理解と特性評価技術【Powered by NICT】
Trapping mechanisms in insulated-gate GaN power devices: Understanding and characterization techniques
著者 (4件):
Yang Shu
(College of Electrical Engineering, Zhejiang University, Hangzhou, P.R. China)
,
Liu Shenghou
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
,
Lu Yunyou
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
,
Chen Kevin J.
(Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong)
資料名:
Physica Status Solidi. A. Applications and Materials Science
(Physica Status Solidi. A. Applications and Materials Science)
巻:
214
号:
3
ページ:
ROMBUNNO.201600607
発行年:
2017年
JST資料番号:
D0774A
ISSN:
1862-6300
CODEN:
PSSABA
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
ドイツ (DEU)
言語:
英語 (EN)