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J-GLOBAL ID:201702260399808935
整理番号:17A0399686
成形サファイア単結晶におけるブロックと残留応力【Powered by NICT】
Blocks and residual stresses in shaped sapphire single crystals
著者 (6件):
Krymov V.M.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
,
Nosov Yu.G.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
,
Bakholdin S.I.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
,
Maslov V.N.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
,
Shul′pina I.L.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
,
Nikolaev V.I.
(Ioffe Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg 194021, Russia)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
457
ページ:
314-319
発行年:
2017年
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)