文献
J-GLOBAL ID:201702260762767774
整理番号:17A0852261
ジオクチルベンゾチエノ[2,3 b]ベンゾチオフェン バセド薄膜トランジスタにおける温度依存性ゲートバイアスストレス効果【Powered by NICT】
Temperature-Dependent Gate Bias Stress Effect in Dioctylbenzothieno[2,3-b]benzothiophene-Based Thin-Film Transistor
著者 (4件):
Wang Jiawei
(CAS Key Laboratory for Standardization and Measurement for Nanotechnology, Center of Excellence for Nanoscience, and National Center for Nanoscience and Technology, Beijing, China)
,
Liu Tianjun
(CAS Key Laboratory for Standardization and Measurement for Nanotechnology, Center of Excellence for Nanoscience, and National Center for Nanoscience and Technology, Beijing, China)
,
Zhang Yiwei
(CAS Key Laboratory for Standardization and Measurement for Nanotechnology, Center of Excellence for Nanoscience, and National Center for Nanoscience and Technology, Beijing, China)
,
Jiang Chao
(CAS Key Laboratory for Standardization and Measurement for Nanotechnology, Center of Excellence for Nanoscience, and National Center for Nanoscience and Technology, Beijing, China)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
4
ページ:
1723-1727
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)