文献
J-GLOBAL ID:201702261083067743
整理番号:17A1238024
ファセット制御技術を用いたHVPE成長GaN中の転位挙動の可視化【Powered by NICT】
Visualization of dislocation behavior in HVPE-grown GaN using facet controlling techniques
著者 (7件):
Matsubara Tohoru
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
,
Matsubara Tohoru
(UBE Scientific Analysis Laboratory, Inc., Ube, Yamaguchi 755-0001, Japan)
,
Goubara Shin
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
,
Yukizane Kota
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
,
Inomoto Ryo
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
,
Okada Narihito
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
,
Tadatomo Kazuyuki
(Graduate School of Sciences and Technology for Innovation, Yamaguchi University Ube, Yamaguchi 755-8611, Japan)
資料名:
Physica Status Solidi. B. Basic Solid State Physics
(Physica Status Solidi. B. Basic Solid State Physics)
巻:
254
号:
8
ページ:
null
発行年:
2017年
JST資料番号:
C0599A
ISSN:
0370-1972
CODEN:
PSSBBD
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)