文献
J-GLOBAL ID:201702261180254400
整理番号:17A0955181
トンネル電界効果トランジスタのバイアス温度不安定性
Bias temperature instability in tunnel field-effect transistors
著者 (14件):
MIZUBAYASHI Wataru
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MORI Takahiro
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
FUKUDA Koichi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
ISHIKAWA Yuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MORITA Yukinori
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MIGITA Shinji
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
OTA Hiroyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
LIU Yongxun
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
O’UCHI Shinichi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
TSUKADA Junichi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
YAMAUCHI Hiromi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MATSUKAWA Takashi
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
MASAHARA Meishoku
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
ENDO Kazuhiko
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
資料名:
Japanese Journal of Applied Physics
(Japanese Journal of Applied Physics)
巻:
56
号:
4S
ページ:
04CA04.1-04CA04.8
発行年:
2017年04月
JST資料番号:
G0520B
ISSN:
0021-4922
CODEN:
JJAPB6
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)