文献
J-GLOBAL ID:201702261236386055
整理番号:17A1355258
低障壁高さスピネルMgGa_2O_4を用いたエピタキシャル磁気トンネル接合【Powered by NICT】
Epitaxial magnetic tunnel junctions with a low barrier height spinel MgGa2O4
著者 (12件):
Sukegawa H.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
,
Kato Y.
(Toshiba Corporation, Kawasaki, Japan)
,
Belmoubarik M.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
,
Cheng P.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
,
Daibou T.
(Toshiba Corporation, Kawasaki, Japan)
,
Shimomura N.
(Toshiba Corporation, Kawasaki, Japan)
,
Kamiguchi Y.
(Toshiba Corporation, Kawasaki, Japan)
,
Ito J.
(Toshiba Corporation, Kawasaki, Japan)
,
Yoda H.
(Toshiba Corporation, Kawasaki, Japan)
,
Ohkubo T.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
,
Mitani S.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
,
Hono K.
(Research Center for Magnetic and Spintronic Materials, National Institute for Materials Science (NIMS), Tsukuba, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
INTERMAG
ページ:
1
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)