文献
J-GLOBAL ID:201702261296903230
整理番号:17A1061603
変位損傷検出器に基づくp-i-nダイオードの特性【Powered by NICT】
Characteristics of p-i-n diodes basing on displacement damage detector
著者 (8件):
Jing Sun
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
,
Jing Sun
(University of Chinese Academy of Sciences, Beijing 100049, China)
,
Qi Guo
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
,
Xin Yu
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
,
Xin Yu
(University of Chinese Academy of Sciences, Beijing 100049, China)
,
Cheng-Fa He
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
,
Wei-Lei Shi
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
,
Xing-Yao Zhang
(Xinjiang Key Laboratory of Electronic Information Material and Device, Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Technical Institute of Physics & Chemistry of CAS, Urumqi 830011, China)
資料名:
Radiation Physics and Chemistry
(Radiation Physics and Chemistry)
巻:
139
ページ:
11-16
発行年:
2017年
JST資料番号:
D0627A
ISSN:
0969-806X
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)