文献
J-GLOBAL ID:201702261316616850
整理番号:17A0825271
Dフリップフロップのシングルイベントアップセット感度:130nm技術ノードにおけるバルクSiとPDSOIの比較【Powered by NICT】
Single Event Upset Sensitivity of D-Flip Flop: Comparison of PDSOI With Bulk Si at 130 nm Technology Node
著者 (9件):
Zhang Leqing
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Xu Jialing
(Shanghai Engineering Center for Microsatellites, Chinese Academy of Sciences, Shanghai, China)
,
Fan Shuang
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Dai Lihua
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Bi Dawei
(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Lu Jian
(Shanghai Engineering Center for Microsatellites, Chinese Academy of Sciences, Shanghai, China)
,
Hu Zhiyuan
(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Zhang Mengying
(State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
,
Zhang Zhengxuan
(Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, China)
資料名:
IEEE Transactions on Nuclear Science
(IEEE Transactions on Nuclear Science)
巻:
64
号:
1
ページ:
683-688
発行年:
2017年
JST資料番号:
C0235A
ISSN:
0018-9499
CODEN:
IETNAE
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)