文献
J-GLOBAL ID:201702261730532059
整理番号:17A1038189
Zrドーピングの関数としてのHfO_2薄膜の強誘電性【Powered by NICT】
Ferroelectricity in HfO2 thin films as a function of Zr doping
著者 (10件):
Karbasian Golnaz
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Tan Ava
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Yadav Ajay
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Sorensen Eric Martin Henry
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Serrao Claudy Rayan
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Khan Asif Islam
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Chatterjee Korok
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Sangwan Kim
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Chenming Hu
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
,
Salahuddin Sayeef
(Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, United States of America)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2017
号:
VLSI-TSA
ページ:
1-2
発行年:
2017年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)