文献
J-GLOBAL ID:201702261825245289
整理番号:17A0214274
将来電力スイッチングシステムのためのGaN系半導体デバイス【Powered by NICT】
GaN-based semiconductor devices for future power switching systems
著者 (11件):
Ishida Hidetoshi
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Kajitani Ryo
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Kinoshita Yusuke
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Umeda Hidekazu
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Ujita Shinji
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Ogawa Masahiro
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Tanaka Kenichiro
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Morita Tatsuo
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Tamura Satoshi
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Ishida Masahiro
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
,
Ueda Tetsuzo
(Panasonic Corporation, 3-1-1 Yagumo-nakamachi Moriguchi-shi, Osaka 570-8501, Japan)
資料名:
IEEE Conference Proceedings
(IEEE Conference Proceedings)
巻:
2016
号:
IEDM
ページ:
20.4.1-20.4.4
発行年:
2016年
JST資料番号:
W2441A
資料種別:
会議録 (C)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)