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J-GLOBAL ID:201702262584450576
整理番号:17A0832762
ZnIn_2Se_4に基づくヘテロ接合の電気的性質の解析【Powered by NICT】
Analysis of electrical properties of heterojunction based on ZnIn2Se4
著者 (5件):
Attia A.A.
(Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt)
,
Ali H.A.M.
(Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt)
,
Salem G.F.
(Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt)
,
Ismail M.I.
(Physics Department, Faculty of Education, Ain Shams University, Roxy, 11757, Cairo, Egypt)
,
Al-Harbi F.F.
(Department of Physics, College of Science, Princess Nora Bint Abdulrahman University, Riyadh, Saudi Arabia)
資料名:
Optical Materials
(Optical Materials)
巻:
66
ページ:
480-486
発行年:
2017年
JST資料番号:
W0468A
ISSN:
0925-3467
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)