文献
J-GLOBAL ID:201702262720396706
整理番号:17A0795078
2次元4側面位置有感シリコン光電子増倍管のための新しい歪補正アルゴリズム【Powered by NICT】
New Distortion Correction Algorithm for Two-Dimensional Tetra-Lateral Position-Sensitive Silicon Photomultiplier
著者 (8件):
Zhao Tianqi
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Li Baicheng
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Li Chenhui
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Wang Ruiheng
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Miao Quanlong
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Liang Kun
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Yang Ru
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
,
Han Dejun
(College of Nuclear Science and Technology, Beijing Normal University, Beijing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
38
号:
2
ページ:
228-231
発行年:
2017年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)