文献
J-GLOBAL ID:201702262786568639
整理番号:17A0452051
非融解紫外レーザ熱アニーリング中のp~+/nシリコン超浅接合形成に及ぼすレーザパルスの数の影響【Powered by NICT】
Effect of number of laser pulses on p+/n silicon ultra-shallow junction formation during non-melt ultra-violet laser thermal annealing
著者 (7件):
Jung Sang Min
(School of Integrated Technology, Yonsei University, 161-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Jung Sang Min
(Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Park Chul Jin
(School of Integrated Technology, Yonsei University, 161-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Park Chul Jin
(Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Jeong Hongsik
(Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Shin Moo Whan
(School of Integrated Technology, Yonsei University, 161-1, Songdo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
,
Shin Moo Whan
(Yonsei Institute of Convergence Technology, Yonsei University, 162-1, Songo-dong, Yeonsu-gu, Incheon 406-840, Republic of Korea)
資料名:
Materials Science in Semiconductor Processing
(Materials Science in Semiconductor Processing)
巻:
60
ページ:
34-39
発行年:
2017年
JST資料番号:
W1055A
ISSN:
1369-8001
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)