文献
J-GLOBAL ID:201702263045800555
整理番号:17A0400506
フロントドア結合マイクロ波パルスによって誘起されたGaAs pHEMTのKuバンド損傷特性【Powered by NICT】
Ku band damage characteristics of GaAs pHEMT induced by a front-door coupling microwave pulse
著者 (7件):
Liu Yang
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Chai ChangChun
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Fan QingYang
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Shi ChunLei
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Xi Xiaowen
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Yu XinHai
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
,
Yang YingTang
(Ministry of Education, Key Lab. of Wide Band-Gap Semiconductor Materials and Devices, Xidian Univ., Xi’an 710071, China)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
66
ページ:
32-37
発行年:
2016年
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)