文献
J-GLOBAL ID:201702263341578021
整理番号:17A0850539
高効率,高安定性と低ヒステリシスペロブスカイト太陽電池のためのヨウ化セシウム界面修飾【Powered by NICT】
Cesium Iodide Interface Modification for High Efficiency, High Stability and Low Hysteresis Perovskite Solar Cells
著者 (6件):
Han Fei
(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Luo Junsheng
(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Zhao Bowen
(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Wan Zhongquan
(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
,
Wang Ruilin
(College of Materials Science and Engineering, Sichuan University, Chengdu 610065, PR China)
,
Jia Chunyang
(State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, PR China)
資料名:
Electrochimica Acta
(Electrochimica Acta)
巻:
236
ページ:
122-130
発行年:
2017年
JST資料番号:
B0535B
ISSN:
0013-4686
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)