文献
J-GLOBAL ID:201702263607384361
整理番号:17A0027196
AlSb挿入層を有するタイプII InAs/GaAsSb超格子による検出波長の1μmに向けての推進
Pushing Detection Wavelength Toward $1¥mu ¥text{m}$ by Type II InAs/GaAsSb Superlattices With AlSb Insertion Layers
著者 (9件):
Zhang Yanhua
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Ma Wenquan
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Huang Jianliang
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Cao Yulian
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Liu Ke
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Huang Wenjun
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Zhao Chengcheng
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Ji Haiming
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
,
Yang Tao
(Key Laboratory of Semiconductor Materials Science and the Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
37
号:
9
ページ:
1166-1169
発行年:
2016年
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)