文献
J-GLOBAL ID:201702264043585041
整理番号:17A0996542
高バンドギャップ固有領域を有するAlGaAs n-i-p太陽電池の耐放射線性【Powered by NICT】
Radiation hardness of AlGaAs n-i-p solar cells with higher bandgap intrinsic region
著者 (6件):
Walker A.W.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Heckelmann S.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Tibbits T.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Lackner D.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Bett A.W.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
,
Dimroth F.
(Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstrasse 2, 79110 Freiburg, Germany)
資料名:
Solar Energy Materials and Solar Cells
(Solar Energy Materials and Solar Cells)
巻:
168
ページ:
234-240
発行年:
2017年
JST資料番号:
D0513C
ISSN:
0927-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)