文献
J-GLOBAL ID:201702264300631959
整理番号:17A0794826
p-SiGeへの2×10~ 9 Ωcm2接触抵抗率の周りの低温達成で形成されたTiSi(Ge)接触【Powered by NICT】
TiSi(Ge) Contacts Formed at Low Temperature Achieving Around $2 ¥,¥, ¥times ¥,¥, 10^{-{9}}¥Omega $ cm2 Contact Resistivities to p-SiGe
著者 (10件):
Yu Hao
(Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium)
,
Schaekers Marc
(imec, Leuven, Belgium)
,
Zhang Jian
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Wang Lin-Lin
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Everaert Jean-Luc
(imec, Leuven, Belgium)
,
Horiguchi Naoto
(imec, Leuven, Belgium)
,
Jiang Yu-Long
(State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, China)
,
Mocuta Dan
(imec, Leuven, Belgium)
,
Collaert Nadine
(imec, Leuven, Belgium)
,
De Meyer Kristin
(Department of Electrical Engineering, Katholieke Universiteit Leuven, Leuven, Belgium)
資料名:
IEEE Transactions on Electron Devices
(IEEE Transactions on Electron Devices)
巻:
64
号:
2
ページ:
500-506
発行年:
2017年
JST資料番号:
C0222A
ISSN:
0018-9383
CODEN:
IETDAI
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)