文献
J-GLOBAL ID:201702264327590588
整理番号:17A1309776
金属膜付きおよびむき出しの(-201)Ga2O3におけるドライエッチ損傷のアニーリング
Annealing of dry etch damage in metallized and bare (-201) Ga2O3
著者 (13件):
Yang Jiancheng
(Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611)
,
Ren Fan
(Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611)
,
Khanna Rohit
(Plasma-Therm, Saint Petersburg, Florida 33716)
,
Bevlin Kristen
(Plasma-Therm, Saint Petersburg, Florida 33716)
,
Geerpuram Dwarakanath
(Plasma-Therm, Saint Petersburg, Florida 33716)
,
Tung Li-Chun
(Department of Electrical and Computer Engineering, Texas Tech. University, Lubbock, Texas 79409)
,
Lin Jingyu
(Department of Electrical and Computer Engineering, Texas Tech. University, Lubbock, Texas 79409)
,
Jiang Hongxing
(Department of Electrical and Computer Engineering, Texas Tech. University, Lubbock, Texas 79409)
,
Lee Jonathan
(Department of Physics, University of Central Florida, Orlando, Florida 32816)
,
Flitsiyan Elena
(Department of Physics, University of Central Florida, Orlando, Florida 32816)
,
Chernyak Leonid
(Department of Physics, University of Central Florida, Orlando, Florida 32816)
,
Pearton S. J.
(Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611)
,
Kuramata Akito
(Tamura Corporation and Novel Crystal Technology, Inc., Sayama, Saitama 350-1328, Japan)
資料名:
Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
(Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena)
巻:
35
号:
5
ページ:
051201-051201-5
発行年:
2017年09月
JST資料番号:
E0974A
ISSN:
2166-2746
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)