文献
J-GLOBAL ID:201702264418111502
整理番号:17A1181723
重ほう素ドープ水素化Geエピ層の低温成長とGe/Si光検出器への応用【Powered by NICT】
Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors
著者 (6件):
Kuo Wei-Cheng
(Institute of Materials Science and Engineering, National Central University, Taiwan)
,
Lee Ming Jay
(Department of Optics and Photonics, National Central University, Taiwan)
,
Wu Mount-Learn
(Department of Optics and Photonics, National Central University, Taiwan)
,
Lee Chien-Chieh
(Optical Science Center, National Central University, Taiwan)
,
Tsao I-Yu
(Institute of Materials Science and Engineering, National Central University, Taiwan)
,
Chang Jenq-Yang
(Department of Optics and Photonics, National Central University, Taiwan)
資料名:
Solid-State Electronics
(Solid-State Electronics)
巻:
130
ページ:
41-44
発行年:
2017年
JST資料番号:
H0225A
ISSN:
0038-1101
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)